Molecular spectroscopy techniques are a family of rapid analysis methods that use electromagnetic radiation (infrared and radio waves) to obtain information about the chemical composition of a wide range of different samples. Two of these techniques – infrared, IR, and nuclear magnetic resonance, NMR, spectroscopy – will be used on the present project to establish fast, cheap methods for quality assurance in the food industry. We aim to use a new low-cost, benchtop NMR approach, along with proven IR technology and in tandem with DNA testing, to develop comprehensive screening protocols for verifying the species of origin of animal fats, edible oils, raw and cooked meat products. Beneficiaries of the research will be retailers, producers and other intermediaries in the food chain, analytical service providers, public analysts, and ultimately the consumer.

Silicon carbide (SiC) power metal-oxide-semiconductor field effect transistors (MOSFETs) are being widely adopted in electric vehicle (EV) power conversion applications. After adoption by Tesla, Hyundai, and many other OEMs, SiC MOSFETs have been proven a more efficient alternative to legacy silicon power devices, leading to the rapid expansion of the SiC industry. Hitachi Energy Switzerland ('Hitachi') has a proven track record of developing automotive grade SiC power MOSFETs with a reputation for products with novel MOS interfaces. Oxford Instruments Plasma Technology ('OIPT') have developed a novel oxide deposition process that uses a remote plasma source in a commercial atomic layer deposition (ALD) system. It was demonstrated that this process is highly suitable for the formation of gate oxides in wide bandgap semiconductors. A research team at the University of Warwick ('UoW') has recently developed an ALD silicon dioxide (SiO2) deposition process on SiC that has the potential to be commercialised. This project will bring together the three groups and their relative expertise to demonstrate the potential of ALD oxides in the formation of EV-grade 1.2 kV SiC MOSFETs. The motivation behind this project is to address one of the most pressing issues in the adaptation of this technique by fundamentally changing the way of forming a crucial part of the device, the gate oxide. Conventional dielectric/SiC interfaces are suffering from high density of defect states, hampering the further uptake of this technology. This proof-of-concept project will demonstrate the viability and advantages of utilising ALD deposited oxides (SiO2 and high-k dielectrics such as aluminium oxide, Al2O3) in a commercial SiC MOSFET device. Key outputs of the project will include: \* The first demonstration of a commercially relevant planar 1.2 kV SiC MOSFET that contains OIPT's remote plasma ALD-deposited silicon dioxide (SiO2) and high-k dielectric (e.g. Al2O3) gate oxides. \* A demonstration of the excellent interface quality (e.g. high channel mobilities due to low density of interface traps) in these structures through extraction of key performance indicators such as specific on-resistance or channel mobilities. Demonstration of process benefits by benchmarking with existing commercial products. \* Long-term reliability testing on the demonstrator MOSFETs will demonstrate whether the ALD oxides remain stable over the lifetime of a commercial automotive semiconductor product. \* Integration of the novel ALD oxidation process into a research-grade trench MOS capacitor and trench MOSFET structure.

Longer wavelength visible MicroLEDs (green, amber and red) fabricated in cubic GaN look set to deliver significant efficiency advantages over their conventional counterparts produced in the hexagonal crystalline form of the material, an issue that has been preventing take off for the Augmented and/or Virtual Reality (AR/VR) headset market for several years now. With this roadblock removed, the AR/VR display market is primed for explosive growth. Kubos Semiconductors has developed and is commercialising technology for producing these devices. A critical enabler for the production of cubic GaN is the substrate on which the material is grown which comprises a thin layer of high quality, cubic silicon carbide (3c-SiC) epitaxy deposited on a standard silicon wafer. In common with all semiconductor manufacturing, maximising the diameter of wafer employed is desirable to optimise cost. No domestic source of these substrates currently exists and Kubos is forced to import them from overseas. This project is aimed at establishing an onshore supply chain capable of delivering these critical 3c-SiC on silicon substrates at a quality equivalent to that currently being imported. Innovative processes will be evaluated to improve both product quality and the efficiency and cost of manufacture and demonstrate the principle that this supply chain can be used as a foundation for scaling to high volume 200mm wafer diameter. Led by Kubos Semiconductors which will qualify the substrates for its standard cubic GaN epitaxy and fabricate LEDs, Advanced Epi will develop suitable 3c-SiC epitaxy production processes, Wafer Technology will develop a chemo-mechanical polish (CMP) process to achieve sub-nm roughness and planarization on cubic SiC and Oxford Instruments will develop a plasma process to prepare the grown SiC surface prior to cubic GaN epitaxy. The project will include extensive materials and device characterisation and is targeting a 200mm diameter wafer capability.