Processes will be developed to produce a quantum dot based frequency modifying system for flexible light emitting sheets. New silicon based light emitting diodes will be developed with integral beam shaping and driving logic that will be integrated into a number of flexible substrates with emission spectra tailored to be compatible with the absorption curves of the quantum dots. Printed organic logic circuits will be developed in order to drive these flexible light emitting devices to allow them to be used in fast moving consumer goods, biophotonic medical devices and flexible light sources for temporary structures (tents or in disaster relief). The partners will build up a UK supply chain from the low cost production of quantum dots or phosphorescent nanophosphors, through the conventional printing of flexible substrates and growth of Si based LEDs/microelectronics to the medical and non-medical device manufacturing stakeholders. The partners are: Nano Products Ltd (NAN), PolyPhotonix Ltd(PPX), FlexEnable Ltd(FEN), Plessey Semiconductors Limited (PLS), M-Solv Ltd (MSV), Pharma2Farm Ltd(P2F) and Nottingham Trent University (NTU) who bring together expertise in development of inks, devices and end users to take the products to market.
Awaiting Public Project Summary
A new Uk based mass manufacturing technology will create flexible plastic sheets with embedded electronics
and microscopic light emitting devices. High compressed graphene flakes connected to the devices will allow
heat to be drawn away from the devices so they carry on working efficiently. Formed into many shapes and
sizes the devices could be placed anywhere. They could form part of the exterior of cars and vans to provide
advertising or indicator and brakes lights. On the inside they could provide efficient video displays for
passenger. In the home the devices could be built into the walls, ceilings and floors to allow endless
opportunities for lighting the home. By using graphene to remove the heat these devices will use less energy
and last for longer.
Plessey Semiconductors will be developing a single-arm ECG monitor aimed primarily at sports
monitoring applications, but also with uses in other fields such as home health. Using its award-
winning EPIC sensor in conjunction with knitted electrodes developed by Nottingham Trent University
as part of a previous Innovate UK project, an armband will be produced for testing by Loughborough
University and McClaren Applied Technologies.
The purpose of the project is to develop high efficiency, low cost GaN based LEDs on Anvil’s silicon carbide on
silicon wafers (3C-SiC/Si). Anvil has recently completed an Innovate UK funded feasibility study with the
University of Cambridge that demonstrated its 3C-SiC layers, developed for low cost high efficiency power
devices, have an exciting application in LEDs by providing a cubic substrate that enables the growth of single
phase cubic GaN on large diameter silicon wafers. The ability to produce cubic GaN on large diameter silicon
wafers is clearly recognised as a key enabler for increasing the efficiency and reducing the cost of LED lighting.
Plessey have started to commercialise LEDs produced in conventional (Hexagonal) GaN grown on large
diameter silicon wafers using IP originally developed at The University of Cambridge. Anvil’s IP manages the
inevitable stresses when growing SiC on silicon wafers. The project brings these three technologies together, to
produce high efficiency, low cost LEDs. Such a cost/performance improvement would have a disruptive effect
on the LED market advancing the replacement of incandescent lights and CFLs with solid state lighting.
The objective of this project is to enhance vehicle safety systems through the creation of an automotive driver heart-rate sensor system that produces data of sufficient quality and consistency that it can be used to monitor driver alertness and well-being. Real time analysis of such data will enable the monitoring system to take early action to prevent a driver from falling asleep at the wheel and in the case of commercial vehicle operations, transmit the data over a wireless network to a control centre for automated monitoring of driver well-being.
Based on a technology acquired from the University of Sussex, Plessey Semiconductors has developed a fully patented Electrical Potential Integrated Circuit (EPIC) Sensor which can measure electrophysiology signals without direct skin contact, skin preparation or conductive gels. Nottingham Trent University has developed a number of material technologies which allow the creation of conductive and non-conductive patches and connections within a piece of knitted fabric. These materials can form part of a remote electrode for the EPIC sensor, and thus provide a unique form factor for enhanced data acquisition and vehicle design. .
Existing light emitting diodes (LEDs) do not emit light directionally, so in many applications not all photons are coupled into the optical system and result in wasted energy. This is notably true in image projection systems (a US$3B annual market) which require bigger, much brighter LEDs to replace inefficient discharge lamps. The aim of this project is to advance the development of new large area, high brightness InGaN LEDs with highly directional emission and capable of operating at high electrical power density to achieve the high on-screen lumens needed for advanced digital projectors. The innovation will involve realising such LEDs on Silicon substrates, the incorporation of novel nanostructures by cost effective methods to direct the light output, and wafer bonding to thermally conducting substrates to address the heat extraction problem. The new LEDs will also be tested in a novel projector design that requires multiple highly directional LEDs, to expand market opportunities.
Awaiting Public Project Summary
Awaiting Public Project Summary
This project is developing a novel electric potential sensing technique for use in gas turbine engine monitoring. Specifically the project seeks to optimise the sensor for measurement of ultra-high temperature. This could lead to an industry first of measuring combustion exit temperature, which would have a significant impact on engine efficiency, fuel consumption and emissions. However, as a second objective, the sensor will then be optimised to allow measurement of high temperature blade tip clearance and corollary parameters such as rotational speed. In this case, the technology could displace several existing techniques and improve current temperature limitations. The project will develop the sensors, electronics and associated packaging demonstrators for proof-of-concept tests via a range of laboratory and small engine trials. The project team consists of Meggitt (Lead), the University of Sussex, and Plessey Semiconductors.
This ASDT Project (Autoplan) is designed to remove the failings of existing operations planning systems in managing highly variable manufacturing environments. In such organisations the high frequency with which process and supply chain disruptions occur and changes in product design and customer demands happen, form major barriers to increasing the competitiveness and maintaining the high rate of growth.
Finite Capacity Resource (FCR) planning involves deciding when customers’ jobs are sequenced through shop floor manufacturing areas. Such plans recognise that jobs need to be scheduled when all necessary equipment and labour resources are available and that these resources have limited capacity. Unfortunately FCR plans are subject to frequent and major disruptions caused by for example equipment breakdowns, delays in raw material delivery and changes to customers’ orders.
The result is that frequent manual planning revisions are undertaken that are slow and resource intensive. The autonomous planning processes to be developed will enable faster and more effective planning responses. They will be developed by applying the basic principles and characteristics of the regulatory control networks involved in the biological process of gene transcription. The application principles used have been developed and proof-of-concept tested as part of an EPSRC-funded Systems Biology feasibility project.
With 25,000+ planners in 9,000+ UK manufacturers the total time and resource loss represents a major opportunity to significantly improve UK productivity and competitiveness.
Awaiting Public Project Summary
The HIVICS project has demonstrated high voltage complementary Bipolar and MOS IC technologies integrated on Silicon on Insulator (SOI) substrates to achieve high performance and high area efficiency power devices for automotive and communication market applications.
To address the conflicting demands of electrical isolation, thermal management, stress, high-packing density and low on-resistance, advanced device architectures and novel SOI substrates were optimised for performance and manufacturability using advanced Technology Computer Aided Design (TCAD) simulations.
Novel Compound Buried Layers SOI substrates have demonstrated improved thermal conductivities and capacitances. Patterned buried Tungsten Silicide layers in SOI substrates have been developed for further performance improvements.
Accurate 3D modelling of thermal resistance of Bipolar devices on SOI was developed to create a circuit model that describes the thermal interaction between neighbouring cells.
A stress mediated oxidation model was developed and implemented into a 3D TCAD stress simulation tool and this was calibrated with measurements of Local Oxidation of Silicon (LOCOS) and Deep Trench Isolation structures.